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? semiconductor components industries, llc, 2005 february, 2005 ? rev. xxx 1 publication order number: mgp19n35cl/d mgp19n35cl, mgb19n35cl preferred device ignition igbt 19 amps, 350 volts n ? channel to ? 220 and d 2 pak this logic level insulated gate bipolar transistor (igbt) features monolithic circuitry integrating esd and over ? voltage clamped protection for use in inductive coil drivers applications. primary uses include ignition, direct fuel injection, or wherever high voltage and high current switching is required. ? ideal for igbt ? on ? coil or distributorless ignition system applications ? high pulsed current capability up to 50 a ? gate ? emitter esd protection ? temperature compensated gate ? collector voltage clamp limits stress applied to load ? integrated esd diode protection ? low threshold voltage to interface power loads to logic or microprocessor devices ? low saturation voltage ? optional gate resistor (r g ) maximum ratings ( ? 55 c t j 175 c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ces 380 v dc collector ? gate voltage v cer 380 v dc gate ? emitter voltage v ge 22 v dc collector current ? continuous @ t c = 25 c ? pulsed i c 19 50 a dc a ac esd (human body model) r = 1500 ? , c = 100 pf esd 8.0 kv esd (machine model) r = 0 ? , c = 200 pf esd 800 v total power dissipation @ t c = 25 c derate above 25 c p d 165 1.1 watts w/ c operating and storage temperature range t j , t stg ? 55 to 175 c unclamped collector ? to ? emitter avalanche characteristics ( ? 55 c t j 175 c) characteristic symbol value unit single pulse collector ? to ? emitter avalanche energy v cc = 50 v, v ge = 5.0 v, pk i l = 22.4 a, l = 2.0 mh, starting t j = 25 c v cc = 50 v, v ge = 5.0 v, pk i l = 17.4 a, l = 2.0 mh, starting t j = 150 c e as 500 300 mj reverse avalanche energy v cc = 100 v, v ge = 20 v, l = 3.0 mh, pk i l = 25.8 a, starting t j = 25 c e as(r) 1000 mj 1 gate 3 emitter 4 collector 2 collector 1 gate 3 emitter 4 collector 2 collector to ? 220ab case 221a style 9 1 2 3 4 marking diagrams & pin assignments g19n35cl = device code y = year ww = work week g19n35cl yww g19n35cl yww 1 2 3 4 d 2 pak case 418b style 4 device package shipping ordering information mgp19n35cl to ? 220 50 units/rail MGB19N35CLT4 d2pak 800 tape & reel c e g 19 amperes 350 volts (clamped) v ce(on) @ 10 a = 1.8 v max http://onsemi.com n ? channel preferred devices are recommended choices for future use and best overall value. r ge
mgp19n35cl, mgb19n35cl http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.9 c/w thermal resistance, junction to ambient to ? 220 r ja 62.5 d 2 pak (note 1.) r ja 50 maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 275 c electrical characteristics characteristic symbol test conditions temperature min typ max unit off characteristics collector ? emitter clamp voltage bv ces i c = 2.0 ma t j = ? 40 c to 150 c 320 350 380 v dc i c = 10 ma t j = ? 40 c to 150 c 330 360 380 zero gate voltage collector current i ces v 300 v t j = 25 c ? 1.5 20 a dc g ces v ce = 300 v, v ge = 0 v t j = 150 c ? 15 40* dc v ge = 0 v t j = ? 40 c ? 0.7 1.5 reverse collector ? emitter leakage current i ecs v 24 v t j = 25 c ? 0.35 1.0 ma g ecs v ce = ? 24 v t j = 150 c ? 10 20* t j = ? 40 c ? 0.05 0.5 reverse collector ? emitter clamp voltage b vces(r) i 75 a t j = 25 c 25 33 50 v dc pg vces(r) i c = ? 75 ma t j = 150 c 25 36 50 dc t j = ? 40 c 25 30 50 gate ? emitter clamp voltage bv ges i g = 5.0 ma t j = ? 40 c to 150 c 17 20 22 v dc gate ? emitter leakage current i ges v ge = 10 v t j = ? 40 c to 150 c 384 500 1000 a dc gate resistor (optional) r g ? t j = ? 40 c to 150 c ? 70 ? ? gate emitter resistor r ge ? t j = ? 40 c to 150 c 10 20 26 k ? on characteristics (note 2.) gate threshold voltage v ge(th) i 10 a t j = 25 c 1.4 1.7 2.0 v dc g ge(th) i c = 1.0 ma, v ge = v ce t j = 150 c 0.75 1.1 1.4 dc v ge = v ce t j = ? 40 c 1.6 1.9 2.1* threshold temperature coefficient (negative) ? ? ? ? 4.4 ? mv/ c 1. when surface mounted to an fr4 board using the minimum recommended pad size. 2. pulse test: pulse width 300 s, duty cycle 2%. *maximum value of characteristic across temperature range.
mgp19n35cl, mgb19n35cl http://onsemi.com 3 electrical characteristics (continued) characteristic symbol test conditions temperature min typ max unit on characteristics (continued) (note 3.) collector ? to ? emitter on ? voltage v ce(on) i 60 a t j = 25 c 1.0 1.25 1.6 v dc g ce(on) i c = 6.0 a, v ge = 4. 0 v t j = 150 c 0.8 1.05 1.4 dc v ge = 4 . 0 v t j = ? 40 c 1.15 1.4 1.75* i 10 a t j = 25 c 1.2 1.5 1.8 i c = 10 a, v ge = 4. 0 v t j = 150 c 1.0 1.3 1.6 v ge = 4 . 0 v t j = ? 40 c 1.3 1.6 1.9* i 15 a t j = 25 c 1.5 1.75 2.1 i c = 15 a, v ge = 4. 0 v t j = 150 c 1.35 1.65 1.95 v ge = 4 . 0 v t j = ? 40 c 1.5 1.8 2.1* i 20 a t j = 25 c 1.7 2.0 2.3 i c = 20 a, v ge = 4. 0 v t j = 150 c 1.6 1.9 2.2 v ge = 4 . 0 v t j = ? 40 c 1.7 2.0 2.3* i 25 a t j = 25 c 2.0 2.25 2.6 i c = 25 a, v ge = 4. 0 v t j = 150 c 2.0 2.3 2.7* v ge = 4 . 0 v t j = ? 40 c 2.0 2.2 2.6 collector ? to ? emitter on ? voltage v ce(on) i c = 10 a, v ge = 4.5 v t j = 150 c ? 1.3 1.8 v dc forward transconductance gfs v ce = 5.0 v, i c = 6.0 a t j = ? 40 c to 150 c 8.0 15 25 mhos dynamic characteristics input capacitance c iss v 25 v v 0 v t 40 c t ? 1500 1800 pf output capacitance c oss v cc = 25 v, v ge = 0 v f = 1. 0 mhz t j = ? 40 c to 1 50 c ? 130 160 p transfer capacitance c rss f = 1 . 0 mhz 150 c ? 6.0 8.0 switching characteristics (note 3.) turn ? off delay time (inductive) t d(off) v cc = 300 v, i c = 10 a r 10 k ? l 300 h t j = 25 c ? 5.0 10 sec y( ) d(off) cc c r g = 1.0 k ? , l = 300 h t j = 150 c ? 6.0 10 ? l 300 h t j = 25 c ? 6.0 10 () f cc c r g = 1.0 k ? , l = 300 h t j = 150 c ? 11 15* turn ? off delay time (resistive) t d(off) v cc = 300 v, i c = 6.5 a r 10 k ? r 46 ? c ? 6.0 10 sec y( ) d(off) cc c r g = 1.0 k ? , r l = 46 ? t j = 150 c ? 7.0 10 ? r 46 ? c ? 12 20 () f cc c r g = 1.0 k ? , r l = 46 ? t j = 150 c ? 18 22* turn ? on delay time t d(on) v cc = 10 v, i c = 6.5 a r 10 k ? r 15 ? c ? 1.5 2.0 sec y d(on) cc c r g = 1.0 k ? , r l = 1.5 ? t j = 150 c ? 1.5 2.0 ? r 15 ? c ? 4.0 6.0 r cc c r g = 1.0 k ? , r l = 1.5 ? t j = 150 c ? 5.0 6.0 3. pulse test: pulse width 300 s, duty cycle 2%. *maximum value of characteristic across temperature range.
mgp19n35cl, mgb19n35cl http://onsemi.com 4 typical electrical characteristics (unless otherwise noted) 2.5 1.0 3.0 0.5 2.0 0.0 1.5 25 20 15 10 5 30 0 35 40 45 50 55 60 10000 1000 100 10 0 0 120 60 40 20 140 180 80 100 160 1 0 40 6 10 4 2 i c, collector current (amps) 0 60 20 30 50 8 1357 1.0 0.5 0.0 1.5 2.0 2.5 0 40 6 10 4 2 i c, collector current (amps) 0 v ce , collector to emitter voltage (volts) figure 1. output characteristics figure 2. output characteristics 02 1.5 1 0.5 2.5 3 3.5 figure 3. transfer characteristics v ge , gate to emitter voltage (volts) figure 4. collector ? to ? emitter saturation voltage vs. junction temperature t j , junction temperature ( c) v ce , collector to emitter voltage (volts) i c, collector current (amps) figure 5. capacitance variation v ce , collector to emitter voltage (volts) figure 6. threshold voltage vs. temperature temperature ( c) c, capacitance (pf) threshold voltage (volts) 60 ? 50 50 75 25 0 100 ? 25 125 v ge = 10.0 v v ce , collector to emitter voltage (volts) 20 30 50 8 1357 v ge = 5.0 v v ge = 4.5 v v ge = 4.0 v v ge = 3.5 v v ge = 3.0 v v ge = 2.5 v t j = 25 c t j = 150 c v ge = 10.0 v v ge = 5.0 v v ge = 4.5 v v ge = 4.0 v v ge = 3.5 v v ge = 3.0 v v ge = 2.5 v v ce = 10 v t j = 25 c t j = 150 c t j = ? 40 c 4 4.5 5 150 v ge = 5.0 v i c = 25 a i c = 20 a i c = 15 a i c = 10 a i c = 5 a ? 50 50 75 25 0 100 ? 25 125 150 mean + 4 mean ? 4 mean i c = 1 ma c rss c iss c oss
mgp19n35cl, mgb19n35cl http://onsemi.com 5 20 10 25 5 15 0 30 temperature ( c) i l , latch current (amps) l = 2.0 mh ? 50 50 75 25 0 100 ? 25 125 150 175 v cc = 50 v v ge = 5.0 v r g = 1000 ? l = 3.0 mh l = 6.0 mh 0 20 6 4 2 i l , latch current (amps) 0 30 inductor (mh) 5 10 15 25 810 t = 25 c t = 150 c v cc = 50 v v ge = 5.0 v r g = 1000 ? 10 switching time ( s) 0 i c , collector current (amps) figure 7. switching speed vs. case temperature figure 8. switching speed vs. collector current switching time ( s) figure 9. minimum open secondary latch current vs. inductor figure 10. minimum open secondary latch current vs. temperature figure 11. typical open secondary latch vs. inductor inductor (mh) figure 12. typical open secondary latch vs. temperature temperature ( c) i l , latch current (amps) i l , latch current (amps) 14 t c , case temperature ( c) 4 6 8 12 068 410 2121416 045 3 26 1910 2 ? 50 50 75 25 0 100 ? 25 125 150 v cc = 300 v v ge = 5.0 v r g = 1000 ? i c = 10 a l = 300 h 10 0 14 4 6 8 12 2 20 0 30 5 10 15 25 78 t = 25 c t = 150 c v cc = 50 v v ge = 5.0 v r g = 1000 ? l = 2.0 mh v cc = 50 v v ge = 5.0 v r g = 1000 ? l = 3.0 mh l = 6.0 mh ? 50 50 75 25 0 100 ? 25 125 150 175 20 0 30 5 10 15 25 t d(off) t f t d(off) t f v cc = 300 v v ge = 5.0 v r g = 1000 ? t j = 150 c l = 300 h
mgp19n35cl, mgb19n35cl http://onsemi.com 6 1.5 4 4 4 0.125 0.2 0.00001 0.001 0.0001 0.1 10 1 0.01 0.01 t,time (s) r(t), transient thermal resistance ( c/watt) single pulse 110 0.1 0.05 0.02 0.01 100 1000 duty cycle = 0.5 0.1 figure 13. transient thermal resistance (non ? normalized junction ? to ? ambient mounted on fixture in figure 14) figure 14. test fixture for transient thermal curve (48 square inches of 1/8 thick aluminum) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r ja (t) r jc ? r(t) for t 0.2 s
mgp19n35cl, mgb19n35cl http://onsemi.com 7 100 10 0.1 1 0.01 collector ? emitter voltage (volts) collector ? emitter voltage (volts) collector current (amps) collector current (amps) 1 100 10 1000 100 10 0.1 1 0.01 1 100 10 1000 dc t 1 = 1 ms d = 0.05 dc p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 t 1 = 2 ms d = 0.10 t 1 = 3 ms d = 0.30 100 10 0.1 1 0.01 figure 15. single pulse safe operating area (mounted on an infinite heatsink at t c = 25 c) collector ? emitter voltage (volts) figure 16. single pulse safe operating area (mounted on an infinite heatsink at t c = 125 c) collector ? emitter voltage (volts) collector current (amps) collector current (amps) 1 100 10 1000 100 10 0.1 1 0.01 1 100 10 1000 100 s 1 ms 10 ms 100 ms dc 100 s 1 ms 10 ms 100 ms dc figure 17. pulse train safe operating area (mounted on an infinite heatsink at t c = 25 c) figure 18. pulse train safe operating area (mounted on an infinite heatsink at t c = 125 c) t 1 = 1 ms d = 0.05 t 1 = 2 ms d = 0.10 t 1 = 3 ms d = 0.30
mgp19n35cl, mgb19n35cl http://onsemi.com 8 package dimensions style 9: pin 1. gate 2. collector 3. emitter 4. collector to ? 220 three ? lead to ? 220ab case 221a ? 09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j
mgp19n35cl, mgb19n35cl http://onsemi.com 9 package dimensions style 4: pin 1. gate 2. collector 3. emitter 4. collector d 2 pak case 418b ? 03 issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b
mgp19n35cl, mgb19n35cl http://onsemi.com 10 notes
mgp19n35cl, mgb19n35cl http://onsemi.com 11 notes
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